| Autor: |
Hood R; Sandia National Laboratories, Livermore, California 94550, United States., Kolasinski RD; Sandia National Laboratories, Livermore, California 94550, United States., Zutter B; Sandia National Laboratories, Livermore, California 94550, United States., Friddle RW; Sandia National Laboratories, Livermore, California 94550, United States., Sugar JD; Sandia National Laboratories, Livermore, California 94550, United States., Bartelt NC; Sandia National Laboratories, Livermore, California 94550, United States., Habermehl S; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States., Whaley JA; Sandia National Laboratories, Livermore, California 94550, United States., Talin AA; Sandia National Laboratories, Livermore, California 94550, United States. |
| Abstrakt: |
Rugged Pd-metal-insulator-semiconductor (Pd-MIS) hydrogen sensors for detecting charge-exchange particles in fusion reactors have been constructed by utilizing a novel patterned adhesion layer. Poor adhesion at the interface between Pd and SiO 2 is a common failure mode for Pd-MIS devices, severely limiting the Pd thickness and their usefulness as hydrogen sensors. The mechanical integrity of the Pd coatings is of particular importance in magnetic fusion energy research where the Pd-MIS diodes are used to measure hydrogen charge-exchange neutral fluence at the wall in tokamaks. In this application, particularly thick Pd contacts are desirable to prevent damage caused by high-energy particles; however, such thick Pd coatings are prone to mechanical failure due to blistering and wire bond detachment during construction or operation. A continuous Ti or Cr adhesion layer is not possible for this application since it would interfere with H uptake at the SiO 2 interface, which is essential for the device to generate a response. In this work, we demonstrate that a patterned Cr interlayer substantially improves adhesion while still providing access for hydrogen to reach the SiO 2 -Pd interface. |
