| Autor: |
Mendoza CD; Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, Brazil., Freire FL Jr; Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22451-900, RJ, Brazil. |
| Jazyk: |
angličtina |
| Zdroj: |
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jul 26; Vol. 13 (15). Date of Electronic Publication: 2023 Jul 26. |
| DOI: |
10.3390/nano13152166 |
| Abstrakt: |
We investigated the interfacial electronic structure of the bidimensional interface of single-layer graphene on a germanium substrate. The procedure followed a well-established approach using ultraviolet (UPS) and X-ray (XPS) photoelectron spectroscopy. The direct synthesis of the single-layer graphene on the surface of (110) undoped Ge substrates was conducted via chemical vapor deposition (CVD). The main graphitic properties of the systems were identified, and it was shown that the Ge substrate affected the electronic structure of the single-layer graphene, indicating the electronic coupling between the graphene and the Ge substrate. Furthermore, the relevant features associated with the Schottky contact's nature, the energy level's alignments, and the energy barrier's heights for electron and hole injection were obtained in this work. The results are useful, given the possible integration of single-layer graphene on a Ge substrate with the complementary metal-oxide-semiconductor (CMOS) technology. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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