Electrical Characteristics of CMOS-Compatible SiO x -Based Resistive-Switching Devices.

Autor:	Koryazhkina MN; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Filatov DO; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Tikhov SV; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Belov AI; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Serov DA; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Kryukov RN; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Zubkov SY; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Vorontsov VA; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Pavlov DA; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Gryaznov EG; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Orlova ES; Department of English for Natural Sciences, National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia., Shchanikov SA; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.; Institute of Nanotechnologies Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia.; Department of Information Technologies, Vladimir State University, 600000 Vladimir, Russia., Mikhaylov AN; Research and Education Center 'Physics of Solid-State Nanostructures', National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.; Institute of Nanotechnologies Electronics and Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia., Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Jazyk:	angličtina
Zdroj:	Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jul 16; Vol. 13 (14). Date of Electronic Publication: 2023 Jul 16.
DOI:	10.3390/nano13142082
Abstrakt:	The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method. It is revealed that the as-fabricated devices do not require electroforming but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior. The conduction mechanisms in the device stack are associated with the effect of traps in the insulator, which form filaments in the places where the electric field is concentrated. The filaments shortcut the capacitance of the stack to different degrees in the high-resistance state (HRS) and in the low-resistance state (LRS). As a result, the electron transport possesses an activation nature with relatively low values of activation energy in an HRS. On the contrary, Ohm's law and tunneling are observed in an LRS. CMOS-compatible materials and low-temperature fabrication techniques enable the easy integration of the studied resistive-switching devices with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.
Databáze:	MEDLINE
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