| Autor: |
Hysmith H; Bredesen Center for Interdisciplinary Research, University of Tennessee, Knoxville, Tennessee 37996, United States., Park SY; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Yang J; Department of Materials Science and Engineering, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, Tennessee 37920, United States., Ievlev AV; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Liu Y; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Zhu K; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Sumpter BG; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States., Berry J; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Ahmadi M; Department of Materials Science and Engineering, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, Tennessee 37920, United States., Ovchinnikova OS; Department of Materials Science and Engineering, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, Tennessee 37920, United States. |
| Abstrakt: |
Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO 2 substrate processing significantly improves the performance of (FAPbI 3 ) 0.97 (MAPbBr 3 ) 0.03 by reducing micro-strain in the SnO 2 lattice, allowing distribution of K + from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO 2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K + at the perovskite/SnO 2 interface, indicating K + passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO 2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device. |
