Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting.

Autor: Lee S; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA., Seo D; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA., Park SH; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA., Izquierdo N; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA., Lee EH; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA., Younas R; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA., Zhou G; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA., Palei M; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA., Hoffman AJ; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA., Jang MS; School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea., Hinkle CL; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA., Koester SJ; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA. skoester@umn.edu., Low T; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA. tlow@umn.edu.; School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, 55455, USA. tlow@umn.edu.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2023 Jul 01; Vol. 14 (1), pp. 3889. Date of Electronic Publication: 2023 Jul 01.
DOI: 10.1038/s41467-023-39450-0
Abstrakt: Near-perfect light absorbers (NPLAs), with absorbance, [Formula: see text], of at least 99%, have a wide range of applications ranging from energy and sensing devices to stealth technologies and secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of transition metal dichalcogenides (TMDs). The key innovation in our design, verified using theoretical calculations, is to stack monolayer TMDs in such a way as to minimize their interlayer coupling, thus preserving their strong band nesting properties. We experimentally demonstrate two feasible routes to controlling the interlayer coupling: twisted TMD bi-layers and TMD/buffer layer/TMD tri-layer heterostructures. Using these approaches, we demonstrate room-temperature values of [Formula: see text]=95% at λ=2.8 eV with theoretically predicted values as high as 99%. Moreover, the chemical variety of TMDs allows us to design NPLAs covering the entire visible range, paving the way for efficient atomically-thin optoelectronics.
(© 2023. The Author(s).)
Databáze: MEDLINE
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