A High-Entropy-Oxides-Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution.

Autor: Tsai JY; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Chen JY; Department of Materials Science and Engineering, National United University, Miaoli, 360, Taiwan., Huang CW; Department of Materials Science and Engineering, Feng Chia University, Taichung, 407, Taiwan., Lo HY; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Ke WE; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Chu YH; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 300, Taiwan., Wu WW; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.; Center for the Intelligent Semiconductor Nano-system Technology Research, Hsinchu, 30078, Taiwan.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2023 Oct; Vol. 35 (41), pp. e2302979. Date of Electronic Publication: 2023 Sep 01.
DOI: 10.1002/adma.202302979
Abstrakt: The application of high-entropy oxide (HEO) has attracted significant attention in recent years owing to their unique structural characteristics, such as excellent electrochemical properties and long-term cycling stability. However, the application of resistive random-access memory (RRAM) has not been extensively studied, and the switching mechanism of HEO-based RRAM has yet to be thoroughly investigated. In this study, HEO (Cr, Mn, Fe, Co, Ni) 3 O 4 with a spinel structure is epitaxially grown on a Nb:STO conductive substrate, and Pt metal is deposited as the top electrode. After the resistive-switching operation, some regions of the spinel structure are transformed into a rock-salt structure and analyzed using advanced transmission electron microscopy and scanning transmission electron microscopy. From the results of X-ray photoelectron spectroscopy and electron energy loss spectroscopy, only specific elements would change their valence state, which results in excellent resistive-switching properties with a high on/off ratio on the order of 10 5 , outstanding endurance (>4550 cycles), long retention time (>10 4 s), and high stability, which suggests that HEO is a promising RRAM material.
(© 2023 Wiley-VCH GmbH.)
Databáze: MEDLINE
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