| Autor: |
Phimu LK; Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl 796012, India., Dhar RS; Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl 796012, India., Singh KJ; Department of Electronics and Communication Engineering, Manipur Institute of Technology, Canchipur, Imphal 795003, India., Banerjee A; Microsystem Design-Integration Lab, Physics Department, Bidhan Chandra College, Asansol 713303, India. |
| Jazyk: |
angličtina |
| Zdroj: |
Micromachines [Micromachines (Basel)] 2023 Jun 10; Vol. 14 (6). Date of Electronic Publication: 2023 Jun 10. |
| DOI: |
10.3390/mi14061226 |
| Abstrakt: |
Comparative studies of the 2D numerical modelling and simulation of graphene-based gallium arsenide and silicon Schottky junction solar cell are studied using TCAD tools. The performance of photovoltaic cells was examined while taking parameters, such as substrate thickness, relationship between transmittance and work function of graphene, and n-type doing concentration of substrate semiconduction. The area with the highest efficiency for photogenerated carriers was found to be located near the interface region under light illumination. The significant enhancement of power conversion efficiency was shown in the cell with a thicker carrier absorption Si substrate layer, larger graphene work function, and average doping in a silicon substrate. Thus, for improved cell structure, the maximum J SC = 4.7 mA/cm 2 , V OC = 0.19 V, and fill factor = 59.73% are found under AM1.5G, exhibiting maximum efficiency of 6.5% (1 sun). The EQE of the cell is well above 60%. This work reports the influence of different substrate thickness, work function, and N-type doping on the efficiency and characteristics of graphene-based Schottky solar cells. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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