| Autor: |
Kundale SS; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Kamble GU; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Patil PP; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Patil SL; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Rokade KA; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India., Khot AC; School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea., Nirmal KA; School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea., Kamat RK; Department of Electronics, Shivaji University, Kolhapur 416004, India.; Department of Physics, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India., Kim KH; Department of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of Korea., An HM; Department of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of Korea., Dongale TD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India.; School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea., Kim TG; School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea. |
| Abstrakt: |
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section. |
