Exchange-Biased Quantum Anomalous Hall Effect.

Autor: Zhang P; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA., Balakrishnan PP; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA., Eckberg C; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA.; Fibertek Inc., Herndon, VA, 20171, USA.; US Army Research Laboratory, Adelphi, MD, 20783, USA.; US Army Research Laboratory, Playa Vista, CA, 90094, USA., Deng P; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA., Nozaki T; Department of Electronic Engineering, Tohoku University, Sendai, 980-8579, Japan., Chong SK; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA., Quarterman P; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA., Holtz ME; Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland, 20899, USA., Maranville BB; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA., Qiu G; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA., Pan L; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA., Emmanouilidou E; Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, 90095, USA., Ni N; Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, 90095, USA., Sahashi M; Department of Electronic Engineering, Tohoku University, Sendai, 980-8579, Japan., Grutter A; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA., Wang KL; Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA.; Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA, 90095, USA.; Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2023 Aug; Vol. 35 (31), pp. e2300391. Date of Electronic Publication: 2023 Jun 27.
DOI: 10.1002/adma.202300391
Abstrakt: The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, the QAH effect is realized in the magnetic topological insulator Cr-doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), a strong exchange coupling is found between CBST and Al-Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. This study further demonstrates that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr 2 O 3 layer. It demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics.
(© 2023 Wiley-VCH GmbH.)
Databáze: MEDLINE
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