| Autor: |
Lyu D; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA., Shoup JE; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Huang D; Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, USA., García-Barriocanal J; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA., Jia Q; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA., Echtenkamp W; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA., Rojas GA; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA., Yu G; Characterization Facility, University of Minnesota, Minneapolis, MN 55455, USA., Zink BR; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA., Wang X; Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455, USA., Gopman DB; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Wang JP; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA. |
| Abstrakt: |
As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L 1 0 -FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L 1 0 -FePd thin films on Si/SiO 2 wafers is still unmet. In this paper, we prepare high-quality L 1 0 -FePd and its SAF on Si/SiO 2 wafers by coating the amorphous SiO 2 surface with an MgO(001) seed layer. The prepared L 1 0 -FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L 1 0 -FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L 1 0 -FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical. |
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