Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation.
| Autor: | Nawwar MA; Physics Department, Faculty of Science, Menoufia University Menoufia Shebin El-Koom 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Abo Ghazala MS; Physics Department, Faculty of Science, Menoufia University Menoufia Shebin El-Koom 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Sharaf El-Deen LM; Physics Department, Faculty of Science, Menoufia University Menoufia Shebin El-Koom 32511 Egypt mohamed.nawwar@science.menofia.edu.eg., Anis B; Spectroscopy Department, Physics Research Institute, National Research Centre 33 El Bohouth St., Dokki Giza 12622 Egypt., El-Shaer A; Physics Department, Faculty of Science, Kafrelsheikh University KafrelSheikh 33516 Egypt., Elseman AM; Electronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI) Helwan-Cairo 11421 Egypt., Rashad MM; Electronic & Magnetic Materials Department, Advanced Materials Institute, Central Metallurgical Research & Development Institute (CMRDI) Helwan-Cairo 11421 Egypt., Kashyout AEB; Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City) New Borg El-Arab City Alexandria 21943 Egypt akashyout@srtacity.sci.eg. |
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| Jazyk: | angličtina |
| Zdroj: | RSC advances [RSC Adv] 2023 May 11; Vol. 13 (21), pp. 14472. Date of Electronic Publication: 2023 May 11 (Print Publication: 2023). |
| DOI: | 10.1039/d3ra90040a |
| Abstrakt: | [This corrects the article DOI: 10.1039/D3RA00805C.]. (This journal is © The Royal Society of Chemistry.) |
| Databáze: | MEDLINE |
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