| Autor: |
Fetisov LY; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Dzhaparidze MV; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Savelev DV; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Burdin DA; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia., Turutin AV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Kuts VV; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Milovich FO; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Temirov AA; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Parkhomenko YN; Laboratory of Physics of Oxide Ferroelectrics, National University of Science and Technology MISiS, 119049 Moscow, Russia., Fetisov YK; Research and Educational Center 'Magnetoelectric Materials and Devices', MIREA-Russian Technological University, 119454 Moscow, Russia. |
| Abstrakt: |
This paper investigates the possibilities of creating magnetic field sensors using the direct magnetoelectric (ME) effect in a monolithic heterostructure of amorphous ferromagnetic material/langatate. Layers of 1.5 μm-thick FeCoSiB amorphous ferromagnetic material were deposited on the surface of the langatate single crystal using magnetron sputtering. At the resonance frequency of the structure, 107 kHz, the ME coefficient of linear conversion of 76.6 V/(Oe∙cm) was obtained. Furthermore, the nonlinear ME effect of voltage harmonic generation was observed with an increasing excitation magnetic field. The efficiency of generating the second and third harmonics was about 6.3 V/(Oe 2 ∙cm) and 1.8 V/(Oe 3 ∙cm), respectively. A hysteresis dependence of ME voltage on a permanent magnetic field was observed due to the presence of α-Fe iron crystalline phases in the magnetic layer. At the resonance frequency, the monolithic heterostructure had a sensitivity to the AC magnetic field of 4.6 V/Oe, a minimum detectable magnetic field of ~70 pT, and a low level of magnetic noise of 0.36 pT/Hz 1/2 , which allows it to be used in ME magnetic field sensors. |
