| Autor: |
Makihara K; Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.; IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, Germany., Yamamoto Y; IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, Germany., Imai Y; Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan., Taoka N; Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan., Schubert MA; IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, Germany., Tillack B; IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, Germany.; Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany., Miyazaki S; Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. |
| Abstrakt: |
We have demonstrated the high-density formation of super-atom-like Si quantum dots with Ge-core on ultrathin SiO 2 with control of high-selective chemical-vapor deposition and applied them to an active layer of light-emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge-core, reflecting the type II energy band discontinuity between the Si-clad and Ge-core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near-infrared region and is attributed to radiative recombination between quantized states in the Ge-core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si-ultra-large-scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics. |
