| Autor: |
Qiu J; School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China., Su L; School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China., McDowell LL; School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019, United States., Phan Q; School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019, United States., Liu Y; School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China., Zhang G; School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China., Yang Y; School of Microelectronics, Dalian University of Technology, Dalian 116024, P. R. China., Shi Z; School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019, United States. |
| Abstrakt: |
Developing high-performance, uncooled mid-wavelength infrared (MWIR) detectors is a challenging task due to the inherent physical properties of materials and manufacturing technologies. In this study, we designed and manufactured an uncooled polycrystalline PbSe/CdSe heterojunction photovoltaic (PV) detector through vapor physical deposition. The resulting 10 μm × 10 μm device exhibited a peak detectivity of 7.5 × 10 9 and 3 × 10 10 cm·Hz 1/2 ·W -1 at 298 and 220 K, respectively, under blackbody radiation. These values are comparable to those of typical PbSe photoconductive detectors fabricated through standard chemical bath deposition. Additionally, the sensitization-free process used to create these PbSe/CdSe PV detectors allows for high replicability and yield, making them promising candidates for low-cost, high-performance, uncooled MWIR focal plane array imaging in commercial applications. |
