| Autor: |
Hanks LA, Mamic K, Kłos K, Bainbridge A, Fletcher J, Gilder L, Tedstone L, Castaño FJ, Marshall ARJ |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2023 Apr 24; Vol. 31 (9), pp. 14358-14366. |
| DOI: |
10.1364/OE.485631 |
| Abstrakt: |
An InGaAsSb p-B-n structure has been designed and characterized for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 µm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 µm, achieved at zero bias. D* of 9.4 × 10 10 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1 × 10 10 Jones up to 380 K. With a view to simple miniaturized detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilization or phase-sensitive detection, indicating the photodiode's potential. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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