| Autor: |
Ha WY, Park E, Eom D, Park HS, Chong D, Tan SS, Tng M, Quek E, Bruschini C, Charbon E, Choi WY, Lee MJ |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2023 Apr 24; Vol. 31 (9), pp. 13798-13805. |
| DOI: |
10.1364/OE.485424 |
| Abstrakt: |
This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well available in BCD is utilized to implement the avalanche multiplication region. The resulting SPAD has a breakdown voltage of 18.4 V while achieving an excellent dark count rate of 4.4 cps/µm 2 at the excess bias voltage of 7 V in spite of the advanced technology node. At the same time, the device achieves a high peak photon detection probability (PDP) of 70.1% at 450 nm thanks to the high and uniform E-field. Its PDP values at 850 and 940 nm, wavelengths of interest for 3D ranging applications reach 7.2 and 3.1%, respectively, with the use of deep N-well. The timing jitter of the SPAD, full width at half maximum (FWHM), is 91 ps at 850 nm. It is expected that the presented SPAD enables cost-effective time-of-flight and LiDAR sensors with the advanced standard technology for many mobile applications. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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