Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes.

Autor: Zhou JY; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China., Li Q; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China., Hao ZH; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China., Lin WX; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China., He ZX; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China., Liang RJ; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China., Guo L; Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China., Li H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China., You L; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China., Tang JS; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China., Xu JS; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China., Li CF; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China., Guo GC; CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.; CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.; Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2023 May 24; Vol. 23 (10), pp. 4334-4343. Date of Electronic Publication: 2023 May 08.
DOI: 10.1021/acs.nanolett.3c00568
Abstrakt: Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.
Databáze: MEDLINE
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