| Autor: |
Leonetti G; Politecnico di Torino, Department of Applied Science and Technology (DISAT), C.so Duca degli Abruzzi 24, 10129, Turin, Italy., Fretto M; Istituto Nazionale di Ricerca Metrologica (INRiM), Advanced Materials Metrology and Life Science, Strada delle cacce 91, 10135 Turin, Italy. g.milano@inrim.it., Bejtka K; Politecnico di Torino, Department of Applied Science and Technology (DISAT), C.so Duca degli Abruzzi 24, 10129, Turin, Italy., Olivetti ES; Istituto Nazionale di Ricerca Metrologica (INRiM), Advanced Materials Metrology and Life Science, Strada delle cacce 91, 10135 Turin, Italy. g.milano@inrim.it., Pirri FC; Politecnico di Torino, Department of Applied Science and Technology (DISAT), C.so Duca degli Abruzzi 24, 10129, Turin, Italy., De Leo N; Istituto Nazionale di Ricerca Metrologica (INRiM), Advanced Materials Metrology and Life Science, Strada delle cacce 91, 10135 Turin, Italy. g.milano@inrim.it., Valov I; Juelich, Institute of Electrochemistry and Energy System, Germany.; Acad. Evgeni Budevski (IEE-BAS, Bulgarian Academy of Sciences (BAS), Acad. G. Bonchev Str., Block 10, 1113 Sofia, Bulgaria., Milano G; Istituto Nazionale di Ricerca Metrologica (INRiM), Advanced Materials Metrology and Life Science, Strada delle cacce 91, 10135 Turin, Italy. g.milano@inrim.it. |
| Abstrakt: |
Memristive devices based on the resistive switching mechanism are continuously attracting attention in the framework of neuromorphic computing and next-generation memory devices. Here, we report on a comprehensive analysis of the resistive switching properties of amorphous NbO x grown by anodic oxidation. Besides a detailed chemical, structural and morphological analysis of the involved materials and interfaces, the mechanism of switching in Nb/NbO x /Au resistive switching cells is discussed by investigating the role of metal-metal oxide interfaces in regulating electronic and ionic transport mechanisms. The resistive switching was found to be related to the formation/rupture of conductive nanofilaments in the NbO x layer under the action of an applied electric field, facilitated by the presence of an oxygen scavenger layer at the Nb/NbO x interface. Electrical characterization including device-to-device variability revealed an endurance >10 3 full-sweep cycles, retention >10 4 s, and multilevel capabilities. Furthermore, the observation of quantized conductance supports the physical mechanism of switching based on the formation of atomic-scale conductive filaments. Besides providing new insights into the switching properties of NbO x , this work also highlights the perspective of anodic oxidation as a promising method for the realization of resistive switching cells. |
