Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review.

Autor: Ji J; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Kwak HM; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea., Yu J; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Park S; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Park JH; Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan., Kim H; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea., Kim S; Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea. sungkyu@sejong.ac.kr., Lee DS; School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea. dslee66@gist.ac.kr., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea. hkum@yonsei.ac.kr.
Jazyk: angličtina
Zdroj: Nano convergence [Nano Converg] 2023 Apr 28; Vol. 10 (1), pp. 19. Date of Electronic Publication: 2023 Apr 28.
DOI: 10.1186/s40580-023-00368-4
Abstrakt: Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.
(© 2023. The Author(s).)
Databáze: MEDLINE
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