Identification of Exciton Complexes in Charge-Tunable Janus W Se S Monolayers.

Autor:	Feuer MSG; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K., Montblanch AR; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K., Sayyad MY; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States., Purser CM; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Qin Y; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States., Alexeev EM; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Cadore AR; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Rosa BLT; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Kerfoot J; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Mostaani E; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Kalȩba R; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K., Kolari P; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States., Kopaczek J; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Taniguchi T; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan., Ferrari AC; Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, U.K., Kara DM; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K., Tongay S; Materials Science and Engineering, School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States., Atatüre M; Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE, U.K.
Jazyk:	angličtina
Zdroj:	ACS nano [ACS Nano] 2023 Apr 25; Vol. 17 (8), pp. 7326-7334. Date of Electronic Publication: 2023 Apr 14.
DOI:	10.1021/acsnano.2c10697
Abstrakt:	Janus transition-metal dichalcogenide monolayers are artificial materials, where one plane of chalcogen atoms is replaced by chalcogen atoms of a different type. Theory predicts an in-built out-of-plane electric field, giving rise to long-lived, dipolar excitons, while preserving direct-bandgap optical transitions in a uniform potential landscape. Previous Janus studies had broad photoluminescence (>18 meV) spectra obfuscating their specific excitonic origin. Here, we identify the neutral and the negatively charged inter- and intravalley exciton transitions in Janus W Se S monolayers with ∼6 meV optical line widths. We integrate Janus monolayers into vertical heterostructures, allowing doping control. Magneto-optic measurements indicate that monolayer W Se S has a direct bandgap at the K points. Our results pave the way for applications such as nanoscale sensing, which relies on resolving excitonic energy shifts, and the development of Janus-based optoelectronic devices, which requires charge-state control and integration into vertical heterostructures.
Databáze:	MEDLINE
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