Correction: Research progress in architecture and application of RRAM with computing-in-memory.
| Autor: | Wang C; College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou 310018 People's Republic of China shige@cjlu.edu.cn., Shi G; College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou 310018 People's Republic of China shige@cjlu.edu.cn., Qiao F; Dept of Electronic Engineering, Tsinghua University Beijing 100084 People's Republic of China., Lin R; College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou 310018 People's Republic of China shige@cjlu.edu.cn., Wu S; College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou 310018 People's Republic of China shige@cjlu.edu.cn., Hu Z; College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou 310018 People's Republic of China shige@cjlu.edu.cn. |
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| Jazyk: | angličtina |
| Zdroj: | Nanoscale advances [Nanoscale Adv] 2023 Mar 20; Vol. 5 (7), pp. 2118. Date of Electronic Publication: 2023 Mar 20 (Print Publication: 2023). |
| DOI: | 10.1039/d3na90030d |
| Abstrakt: | [This corrects the article DOI: 10.1039/D3NA00025G.]. (This journal is © The Royal Society of Chemistry.) |
| Databáze: | MEDLINE |
| Externí odkaz: |
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