Top-Down Fabrication of Bulk-Insulating Topological Insulator Nanowires for Quantum Devices.

Autor: Rößler M; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Fan D; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Münning F; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Legg HF; Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland., Bliesener A; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Lippertz G; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany.; KU Leuven, Quantum Solid State Physics, Celestijnenlaan 200 D, 3001 Leuven, Belgium., Uday A; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Yazdanpanah R; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Feng J; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Taskin A; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany., Ando Y; University of Cologne, Physics Institute II, Zülpicher Str. 77, 50937 Köln, Germany.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2023 Apr 12; Vol. 23 (7), pp. 2846-2853. Date of Electronic Publication: 2023 Mar 28.
DOI: 10.1021/acs.nanolett.3c00169
Abstrakt: In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum confinement of topological surface states leads to a peculiar sub-band structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi 1- x Sb x ) 2 Te 3 thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP, and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-sub-band physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.
Databáze: MEDLINE
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