Ferroelectric Orthorhombic ZrO 2 Thin Films Achieved Through Nanosecond Laser Annealing.

Autor: Crema APS; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Istrate MC; University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania.; National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania., Silva A; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Lenzi V; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Domingues L; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Hill MO; Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom., Teodorescu VS; University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele, Ilfov, 077125, Romania.; National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania., Ghica C; National Institute of Materials Physics, Lab. of Atomic Structures and Defects in Advanced Materials, 405A Atomistilor Str., Magurele, Ilfov, 077125, Romania., Gomes MJM; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Pereira M; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., Marques L; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal., MacManus-Driscoll JL; Dept. of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 OFS, United Kingdom., Silva JPB; Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga, 4710-057, Portugal.; Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga, 4710-057, Portugal.
Jazyk: angličtina
Zdroj: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2023 May; Vol. 10 (15), pp. e2207390. Date of Electronic Publication: 2023 Mar 22.
DOI: 10.1002/advs.202207390
Abstrakt: A new approach for the stabilization of the ferroelectric orthorhombic ZrO 2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiO x /W(14 nm)/ZrO 2 (8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm -2 , remnant polarization of 12.7 µC cm -2 and coercive field of 1.2 MV cm -1 . The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 10 5 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.
(© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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