Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material Field-Effect Transistors.

Autor:	Kim EH; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Lee DH; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Gu TJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Yoo H; Department of Physics, Sogang University, Seoul 04107, Republic of Korea., Jang Y; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Jeong J; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim HW; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kang SG; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim H; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Lee H; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Jo KJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim BJ; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim JW; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Im SH; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Oh CS; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Lee C; School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim KK; Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea., Yang CW; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim H; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim Y; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea., Kim P; Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States., Whang D; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea., Ahn JR; Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.; Samsung-SKKU Graphene Center and SAINT, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jazyk:	angličtina
Zdroj:	Nano letters [Nano Lett] 2023 Apr 12; Vol. 23 (7), pp. 3054-3061. Date of Electronic Publication: 2023 Mar 17.
DOI:	10.1021/acs.nanolett.3c00546
Abstrakt:	As the electron mobility of two-dimensional (2D) materials is dependent on an insulating substrate, the nonuniform surface charge and morphology of silicon dioxide (SiO 2 ) layers degrade the electron mobility of 2D materials. Here, we demonstrate that an atomically thin single-crystal insulating layer of silicon oxynitride (SiON) can be grown epitaxially on a SiC wafer at a wafer scale and find that the electron mobility of graphene field-effect transistors on the SiON layer is 1.5 times higher than that of graphene field-effect transistors on typical SiO 2 films. Microscale and nanoscale void defects caused by heterostructure growth were eliminated for the wafer-scale growth of the single-crystal SiON layer. The single-crystal SiON layer can be grown on a SiC wafer with a single thermal process. This simple fabrication process, compatible with commercial semiconductor fabrication processes, makes the layer an excellent replacement for the SiO 2 /Si wafer.
Databáze:	MEDLINE
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