Autor: |
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Ramer G; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute of Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria., Pavlidis G; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Schwartz JJ; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Yu L; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Ilic R; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Centrone A; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA. |