Revealing Surface and Interface Evolution of Molybdenum Nitride as Carrier-Selective Contacts for Crystalline Silicon Solar Cells.

Autor: Li Y; School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, P. R. China.; Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China.; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Li Y; Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China., Heger JE; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Zhou J; Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China.; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Guan T; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Everett CR; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Wei W; Nano-X, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China., Hong Z; Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China., Wu Y; Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China., Jiang X; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Yin S; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany., Yang X; College of Energy, Soochow University, Suzhou 215006, P. R. China., Li D; Key Lab of Low-Carbon Conversion Science and Engineering, Shanghai Advanced Research Institute, Chinese Academy of Sciences(CAS), 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, P. R. China., Jiang C; Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China., Sun B; Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China., Müller-Buschbaum P; TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany.; Heinz Maier-Leibnitz Zentrum (MLZ), Technical University of Munich, Lichtenbergstr. 1, 85748 Garching, Germany.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Mar 15; Vol. 15 (10), pp. 13753-13760. Date of Electronic Publication: 2023 Mar 06.
DOI: 10.1021/acsami.2c22781
Abstrakt: Molybdenum nitride (MoN x ) was perceived as carrier-selective contacts (CSCs) for crystalline silicon (c-Si) solar cells due to having proper work functions and excellent conductivities. However, the poor passivation and non-Ohmic contact at the c-Si/MoN x interface endow an inferior hole selectivity. Here, the surface, interface, and bulk structures of MoN x films are systematically investigated by X-ray scattering, surface spectroscopy, and electron microscope analysis to reveal the carrier-selective features. Surface layers with the composition of MoO 2.51 N 0.21 form upon air exposure, which induces the overestimated work function and explains the origin of inferior hole selectivities. The c-Si/MoN x interface is confirmed to adopt long-term stability, providing guidance for designing stable CSCs. A detailed evolution of the scattering length density, domain sizes, and crystallinity in the bulk phase is presented to elucidate its superior conductivity. These multiscale structural investigations offer a clear structure-function correlation of MoN x films, providing key inspiration for developing excellent CSCs for c-Si solar cells.
Databáze: MEDLINE
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