Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices.

Autor: Alonso-Orts M; Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee, 28359, Bremen, Germany. alonsoor@uni-bremen.de., Hötzel R; Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee, 28359, Bremen, Germany., Grieb T; Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee, 28359, Bremen, Germany., Auf der Maur M; Department of Electronic Engineering, University of Rome Tor Vergata, Via del Politecnico 1, 00133, Rome, Italy., Ries M; Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany., Nippert F; Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany., März B; Department of Chemistry and Centre for NanoScience, Ludwig-Maximilians-Universität Munich, Butenandtstr. 11, 81377, Munich, Germany., Müller-Caspary K; Department of Chemistry and Centre for NanoScience, Ludwig-Maximilians-Universität Munich, Butenandtstr. 11, 81377, Munich, Germany., Wagner MR; Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany.; Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., 10117, Berlin, Germany., Rosenauer A; Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee, 28359, Bremen, Germany., Eickhoff M; Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee, 28359, Bremen, Germany.
Jazyk: angličtina
Zdroj: Discover nano [Discov Nano] 2023 Mar 01; Vol. 18 (1), pp. 27. Date of Electronic Publication: 2023 Mar 01.
DOI: 10.1186/s11671-023-03808-6
Abstrakt: The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor In x Ga 1-x N regions with a period of 2-3 nm that are covered by a GaN shell and that transition to a more homogenous In x Ga 1-x N core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission.
(© 2023. The Author(s).)
Databáze: MEDLINE
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