Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects.

Autor:	Mazza MF; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Cabán-Acevedo M; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Fu HJ; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Meier MC; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Thompson AC; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Ifkovits ZP; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Carim AI; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States., Lewis NS; 127-72, 210 Noyes Laboratory, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States.; Beckman Institute, California Institute of Technology, Pasadena, California 91125, United States.
Jazyk:	angličtina
Zdroj:	ACS materials Au [ACS Mater Au] 2021 Nov 19; Vol. 2 (2), pp. 74-78. Date of Electronic Publication: 2021 Nov 19 (Print Publication: 2022).
DOI:	10.1021/acsmaterialsau.1c00049
Abstrakt:	Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective water-based ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target defect regions on the graphene sheet, while keeping the basal plane intact, will provide a new mechanism to passivate graphene defects and modify the electronic and physical properties of graphene. Competing Interests: The authors declare no competing financial interest. (© 2021 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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