Study of Gallium-Doped Zinc Oxide Thin Films Processed by Atomic Layer Deposition and RF Magnetron Sputtering for Transparent Antenna Applications.

Autor:	Lunca-Popa P; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Chemin JB; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Adjeroud N; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Kovacova V; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Glinsek S; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Valle N; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., El Hachemi M; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Girod S; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Bouton O; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg., Maris JP; Materials Research and Technology Department (MRT), Luxembourg Institute of Science and Technology (LIST), 41 rue de Brill, L-4422 Belvaux, Luxembourg.
Jazyk:	angličtina
Zdroj:	ACS omega [ACS Omega] 2023 Jan 30; Vol. 8 (6), pp. 5475-5485. Date of Electronic Publication: 2023 Jan 30 (Print Publication: 2023).
DOI:	10.1021/acsomega.2c06574
Abstrakt:	Gallium-doped zinc oxide (GZO) films were fabricated using RF magnetron sputtering and atomic layer deposition (ALD). The latter ones demonstrate higher electrical conductivities (up to 2700 S cm -1 ) and enhanced charge mobilities (18 cm 2 V -1 s -1 ). The morphological analysis reveals differences mostly due to the very different nature of the deposition processes. The film deposited via ALD shows an increased transmittance in the visible range and a very small one in the infrared range that leads to a figure of merit of 0.009 Ω -1 (10 times higher than for the films deposited via sputtering). A benchmarking is made with an RF sputtered indium-doped tin oxide (ITO) film used conventionally in the industry. Another comparison between ZnO, Al:ZnO (AZO), and Ga:ZnO (GZO) films fabricated by ALD is presented, and the evolution of physical properties with doping is evidenced. Finally, we processed GZO thin films on a glass substrate into patterned transparent patch antennas to demonstrate an application case of short-range communication by means of the Bluetooth Low Energy (BLE) protocol. The GZO transparent antennas' performances are compared to a reference ITO antenna on a glass substrate and a conventional copper antenna on FR4 PCB. The results highlight the possibility to use the transparent GZO antenna for reliable short-range communication and the achievability of an antenna entirely processed by ALD. Competing Interests: The authors declare no competing financial interest. (© 2023 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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