| Autor: |
Babunts RA; Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia., Uspenskaya YA; Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia., Romanov NG; Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia., Orlinskii SB; Kazan Federal University, Institute of Physics, 420008 Kazan, Russia., Mamin GV; Kazan Federal University, Institute of Physics, 420008 Kazan, Russia., Shornikova EV; Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany., Yakovlev DR; Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia.; Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany., Bayer M; Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany., Isik F; Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey., Shendre S; Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore., Delikanli S; Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore.; Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey., Demir HV; Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore.; Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey., Baranov PG; Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia. |
