| Autor: |
Stankevič V; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.; Faculty of Electronics, Vilnius Gediminas Technical University, 10223 Vilnius, Lithuania., Keršulis S; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania., Dilys J; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania., Bleizgys V; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania., Viliūnas M; Institute of Chemical Physics, Faculty of Physics, Vilnius University, 03225 Vilnius, Lithuania., Vertelis V; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.; Faculty of Electronics, Vilnius Gediminas Technical University, 10223 Vilnius, Lithuania., Maneikis A; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania., Rudokas V; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania., Plaušinaitienė V; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.; Faculty of Chemistry and Geosciences, Vilnius University, 03225 Vilnius, Lithuania., Žurauskienė N; Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, Sauletekio Ave. 3, 10257 Vilnius, Lithuania.; Faculty of Electronics, Vilnius Gediminas Technical University, 10223 Vilnius, Lithuania. |
| Abstrakt: |
A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganite film with minimized memory effect, and a magnetic field recording module. The memory effect of the La 1-x Sr x (Mn 1-y Co y ) z O 3 manganite films doped with different amounts of Co and Mn was investigated by measuring the magnetoresistance (MR) and resistance relaxation in pulsed magnetic fields up to 20 T in the temperature range of 80-365 K. It was found that for low-temperature applications, films doped with Co (LSMCO) are preferable due to the minimized magnetic memory effect at these temperatures, compared with LSMO films without Co. For applications at temperatures higher than room temperature, nanostructured manganite LSMO films with increased Mn content above the stoichiometric level have to be used. These films do not exhibit magnetic memory effects and have higher MR values. To avoid parasitic signal due to electromotive forces appearing in the transmission line of the sensor during measurement of short-pulsed magnetic fields, a bipolar-pulsed voltage supply for the sensor was used. For signal recording, a measurement module consisting of a pulsed voltage generator with a frequency up to 12.5 MHz, a 16-bit ADC with a sampling rate of 25 MHz, and a microprocessor was proposed. The circuit of the measurement module was shielded against low- and high-frequency electromagnetic noise, and the recorded signal was transmitted to a personal computer using a fiber optic link. The system was tested using magnetic field generators, generating magnetic fields with pulse durations ranging from 3 to 20 μs. The developed magnetic field measurement system can be used for the measurement of high-pulsed magnetic fields with pulse durations in the order of microseconds in different fields of science and industry. |
