Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics.

Autor: Tereshchenko OE; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Golyashov VA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia., Rusetsky VS; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia.; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Kustov DA; Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia., Mironov AV; CJSC 'Ekran FEP', Novosibirsk 630060, Russia., Demin AY; CJSC 'Ekran FEP', Novosibirsk 630060, Russia.
Jazyk: angličtina
Zdroj: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2023 Jan 19; Vol. 13 (3). Date of Electronic Publication: 2023 Jan 19.
DOI: 10.3390/nano13030422
Abstrakt: Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na 2 KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics.
Competing Interests: The authors declare no conflict of interest.
Databáze: MEDLINE
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