A comprehensive correlated analysis of Ra-Doped (ZnO 2 , ZnO) for optoelectronic applications: a first-principle study.
Autor: | Moin M; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Anwar AW; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan. abdulwaheedanwar@uet.edu.pk., Ali A; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Nabi S; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Bashir MZ; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Ali S; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Bilal S; Department of Physics, University of Engineering and Technology, Lahore, 54890, Pakistan., Haq NU; Department of Physics, Comsats University Lahore, Lahore, 54000, Pakistan. |
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Jazyk: | angličtina |
Zdroj: | Journal of molecular modeling [J Mol Model] 2023 Jan 19; Vol. 29 (2), pp. 44. Date of Electronic Publication: 2023 Jan 19. |
DOI: | 10.1007/s00894-022-05425-z |
Abstrakt: | Context: Zinc oxide (ZnO) exhibits bulk-like behavior and is modified by radium doping to attain favorable electronic properties. The elastic and mechanical response of ZnO Methods: Density functional theory has been employed in consistency with generalized gradient approximation (GGA) with PBEsol to analyze the structural, electronic, elastic, mechanical, thermodynamic, and optical response of pure and Ra-doped (ZnO (© 2023. The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.) |
Databáze: | MEDLINE |
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