Non-epitaxial single-crystal 2D material growth by geometric confinement.

Autor: Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Chang CS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Seo S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea., Hu Y; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA., Cha S; Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, South Korea.; Department of Physics and Astronomy, University of California, Riverside, Riverside, CA, USA., Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee JH; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea., Lee S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim JS; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA., Kim KH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, South Korea., Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng Y; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA., Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee JH; ISAC Research, Daejeon, South Korea., Park HS; ISAC Research, Daejeon, South Korea., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea., Jo MH; Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, South Korea.; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea., Yeom GY; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-si, South Korea.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, South Korea., Cho K; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA., Park JH; School of Electronic and Electrical Engineering Sungkyunkwan University, Suwon-si, South Korea. jhpark9@skku.edu.; SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, South Korea. jhpark9@skku.edu., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA. sbae22@wustl.edu.; Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA. sbae22@wustl.edu., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Jazyk: angličtina
Zdroj: Nature [Nature] 2023 Feb; Vol. 614 (7946), pp. 88-94. Date of Electronic Publication: 2023 Jan 18.
DOI: 10.1038/s41586-022-05524-0
Abstrakt: Two-dimensional (2D) materials and their heterostructures show a promising path for next-generation electronics 1-3 . Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. Here we introduce a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. We geometrically confine the growth of the first set of nuclei by defining a selective growth area via patterning SiO 2 masks on two-inch substrates. Owing to substantial reduction of the growth duration at the micrometre-scale SiO 2 trenches, we obtain wafer-scale single-domain monolayer WSe 2 arrays on the arbitrary substrates by filling the trenches via short growth of the first set of nuclei, before the second set of nuclei is introduced, thus without requiring epitaxial seeding. Further growth of transition metal dichalcogenides with the same principle yields the formation of single-domain MoS 2 /WSe 2 heterostructures. Our achievement will lay a strong foundation for 2D materials to fit into industrial settings.
(© 2023. The Author(s), under exclusive licence to Springer Nature Limited.)
Databáze: MEDLINE
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