Study of the influence of gamma irradiation on internal friction in dislocation silicon.

Autor: Ashrapov U; Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan. Electronic address: ashrapov@inp.uz., Makhkamov S; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Sadikov I; Department of Nuclear Energy and Nuclear Technologies of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Tashmetov M; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan., Erdonov M; Laboratory of Radiation Physics and Solid State Electronics Techniques of the Institute of Nuclear Physics of Academy Sciences of Republic, Uzbekistan.
Jazyk: angličtina
Zdroj: Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine [Appl Radiat Isot] 2023 Mar; Vol. 193, pp. 110623. Date of Electronic Publication: 2022 Dec 21.
DOI: 10.1016/j.apradiso.2022.110623
Abstrakt: The effect of radiation defects formed during gamma irradiation of single-crystal silicon on the internal friction in dislocations was studied. It was found that in dislocation silicon, after irradiation with gamma rays of a source of ionizing radiation 60 Co, at first the internal friction (Q -1 ) increases to a maximum value and then Q -1 gradually decreases to the initial values. It is shown that, as a result of gamma irradiation of silicon, the resulting change in Q -1 is associated with the process of relaxation of vacancies with the formation of vacancy defect complexes near dislocation lines. The data of the acoustic emission method (obtained AE spectra) confirm that AE signals in gamma-irradiated silicon arise due to moving dislocations, and the intensity of AE signals initially increases during the first 1.5-2 h, which is also observed with an increase in internal friction depending on Q -1 (t), and then the AE signals decrease in the form of pulses of discrete AE signals.
Competing Interests: Declaration of competing interest The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
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Databáze: MEDLINE
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