Autor: |
Xu Y; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Xu K; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., He L; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Yin TJ; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Mu J; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Men JT; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Zhang W; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China., Ye Q; Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering, Southeast University, Nanjing211189, People's Republic of China. |
Abstrakt: |
Ferroelastic materials have received special attention because of their great promise for mechanical switches, piezoelectric sensors, and data storage applications. Here, we report a novel ferroelastic semiconducting hybrid organic-inorganic perovskite (C 3 H 7 N 2 S)PbBr 3 ( 1 ) [(C 3 H 7 N 2 S) + is 2-amino-2-thiazolinium] with a ferroelastic phase transition at 395 K and an optical band gap of 3.43 eV. 1 has a one-dimensional BaNiO 3 -type structure and undergoes a high-temperature ferroelastic phase transition with an Aizu notation of mmmF 2/ m . Meanwhile, 1 exhibits dielectric switch near the phase transition temperature. By introducing the thioether group, the motion of the molecules or ions of 1 is hindered after the sorption of Pd(II) metal ions, which leads to the disappearance of the high-temperature ferroelastic phase transition and dielectric switch. This is the first reported ferroelastic semiconductor material with Pd(II) adsorption property, by studying the influence of Pd(II) adsorption on high-temperature ferroelastic phase transition, it may be enlightening to further uncover the mechanism of phase transition or the origin of ferroelasticity, which represents an important step toward multifunctional applications of lead-hybrid perovskite-based ferroelastic materials. |