Autor: |
Cheng L; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China., Xiong Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore., Kang L; Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China., Gao Y; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China., Chang Q; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore., Chen M; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore., Qi J; School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China., Yang H; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore., Liu Z; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore., Song JCW; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore., Chia EEM; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore. |