Electrical spectroscopy of defect states and their hybridization in monolayer MoS 2 .

Autor: Zhao Y; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Tripathi M; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Čerņevičs K; Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland., Avsar A; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore., Ji HG; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Gonzalez Marin JF; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Cheon CY; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Wang Z; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland., Yazyev OV; Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland., Kis A; Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland. andras.kis@epfl.ch.; Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland. andras.kis@epfl.ch.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2023 Jan 03; Vol. 14 (1), pp. 44. Date of Electronic Publication: 2023 Jan 03.
DOI: 10.1038/s41467-022-35651-1
Abstrakt: Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is imperative to understand and characterize the influence of defects in this class of materials. Here, we examine the electrical response of defect filling and emission using deep level transient spectroscopy (DLTS) and reveal defect states and their hybridization in a monolayer MOCVD-grown material deposited on CMOS-compatible substrates. Supported by aberration-corrected STEM imaging and theoretical calculations, we find that neighboring sulfur vacancy pairs introduce additional shallow trap states via hybridization of individual vacancy levels. Even though such vacancy pairs only represent ~10% of the total defect concentration, they can have a substantial influence on the off currents and switching slopes of field-effect transistors based on 2D semiconductors. Our technique, which can quantify the energy states of different defects and their interactions, allows rapid and nondestructive electrical characterization of defect states important for the defect engineering of 2D semiconductors.
(© 2023. The Author(s).)
Databáze: MEDLINE
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