Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO 2 Insets.
Autor: | Koroleva AA; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Chernikova AG; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zarubin SS; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Korostylev E; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Khakimov RR; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Zhuk MY; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia., Markeev AM; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia. |
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Jazyk: | angličtina |
Zdroj: | ACS omega [ACS Omega] 2022 Dec 07; Vol. 7 (50), pp. 47084-47095. Date of Electronic Publication: 2022 Dec 07 (Print Publication: 2022). |
DOI: | 10.1021/acsomega.2c06237 |
Abstrakt: | The influence of the bottom TiO Competing Interests: The authors declare no competing financial interest. (© 2022 The Authors. Published by American Chemical Society.) |
Databáze: | MEDLINE |
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