Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping.

Autor:	Sokolova AV; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Skurlov ID; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Babaev AA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Perfenov PS; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Miropoltsev MA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Danilov DV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia., Baranov MA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Kolesnikov IE; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia., Koroleva AV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia., Zhizhin EV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia., Litvin AP; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.; Laboratory of Quantum Processes and Measurements, ITMO University, Saint Petersburg 197101, Russia., Fedorov AV; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia., Cherevkov SA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
Jazyk:	angličtina
Zdroj:	Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Nov 25; Vol. 12 (23). Date of Electronic Publication: 2022 Nov 25.
DOI:	10.3390/nano12234198
Abstrakt:	Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
Databáze:	MEDLINE
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