Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface.

Autor: Hofmann EVS; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.; Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK.; IHP Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany., Stock TJZ; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.; Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK., Warschkow O; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK., Conybeare R; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.; Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK., Curson NJ; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.; Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, UK., Schofield SR; London Centre for Nanotechnology, University College London, London, WC1H 0AH, UK.; Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK.
Jazyk: angličtina
Zdroj: Angewandte Chemie (International ed. in English) [Angew Chem Int Ed Engl] 2023 Feb 06; Vol. 62 (7), pp. e202213982. Date of Electronic Publication: 2023 Jan 10.
DOI: 10.1002/anie.202213982
Abstrakt: Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focused on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH 3 ) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic-scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale-up to large numbers of deterministically placed qubits.
(© 2022 The Authors. Angewandte Chemie International Edition published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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