Impact Analysis of Potential Induced Degradation on Crystalline Silicon Solar Cell Performance by Correlating Practical Diagnosis with MATLAB Simulation.

Autor: Hasan AAQ; Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia., Alkahtani AA; Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia., Islam MA; Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Jalan Universiti, Kuala Lumpur 50603, Selangor, Malaysia., Alsariera YA; Department of Computer Science, College of Science, Northern Border University, Arar 91431, Saudi Arabia., Sathiswary S; Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia., Kassim NM; Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia., Hossain MI; Department of Electrical and Computer Engineering, University of California, Davis, CA 95616, USA.; Marvell Nanofabrication Laboratory (Nanolab), University of California, Berkeley, CA 94720, USA., Ishikawa Y; College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara 252-5258, Kanagawa, Japan., Amin N; Institute of Sustainable Energy, Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Selangor, Malaysia.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2022 Nov 15; Vol. 15 (22). Date of Electronic Publication: 2022 Nov 15.
DOI: 10.3390/ma15228056
Abstrakt: Extensive research on fault diagnosis is essential to detect various faults that occur to different photovoltaic (PV) panels to keep PV systems operating at peak performance. Here, we present an impact analysis of potential induced degradation (PID) on the current-voltage (I-V) characteristics of crystalline silicon (c-Si) solar cells. The impact of parasitic resistances on solar cell performance is highlighted and linked to fault and degradation. Furthermore, a Simulink model for a single solar cell is proposed and used to estimate the I-V characteristics of a PID-affected PV cell based on experimental results attributes. The measured data show that the fill factor (FF) drops by approximately 13.7% from its initial value due to a decrease in shunt resistance (R sh ). Similarly, the simulation results find that the fill factor degraded by approximately 12% from its initial value. The slight increase in measured data could be due to series resistance effects which were assumed to be zero in the simulated data. This study links simulation and experimental work to confirm the I-V curve behavior of PID-affected PV cells, which could help to improve fault diagnosis methods.
Databáze: MEDLINE
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