Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities.

Autor: Lanzetta L; Physical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Webb T; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK., Marin-Beloqui JM; Department of Physical Chemistry, University of Málaga, Andalucia-Tech Campus de Teatinos s/n, 29071, Málaga, Spain., Macdonald TJ; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK.; School of Engineering and Materials Science, Queen Mary University of London, London, E1 4NS, UK., Haque SA; Department of Chemistry and Centre for Processable Electronics, Molecular Sciences Research Hub, Imperial College London, London, W12 0BZ, UK.
Jazyk: angličtina
Zdroj: Angewandte Chemie (International ed. in English) [Angew Chem Int Ed Engl] 2023 Feb 13; Vol. 62 (8), pp. e202213966. Date of Electronic Publication: 2022 Dec 21.
DOI: 10.1002/anie.202213966
Abstrakt: Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn 2+ to Sn 4+ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.
(© 2022 The Authors. Angewandte Chemie International Edition published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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