Steep-slope transistors enabled with 2D quantum coupling stacks.

Autor: Raju P; Department of Electrical and Computer Engineering, Fairfax, George Mason University, Fairfax, VA 22030, United States of America.; Quantum Science & Engineering Center, George Mason University, Fairfax, VA 22030, United States of America., Zhu H; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China., Yang Y; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China., Zhang K; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China., Ioannou D; Department of Electrical and Computer Engineering, Fairfax, George Mason University, Fairfax, VA 22030, United States of America., Li Q; Department of Electrical and Computer Engineering, Fairfax, George Mason University, Fairfax, VA 22030, United States of America.; Quantum Science & Engineering Center, George Mason University, Fairfax, VA 22030, United States of America.
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2022 Nov 15; Vol. 34 (5). Date of Electronic Publication: 2022 Nov 15.
DOI: 10.1088/1361-6528/ac9e5e
Abstrakt: As down scaling of transistors continues, there is a growing interest in developing steep-slope transistors with reduced subthreshold slope (SS) below the Boltzmann limit. In this work, we successfully fabricated steep-slope MoS 2 transistors by incorporating a graphene layer, inserted in the gate stack. For our comprehensive study, we have applied density functional theory to simulate and calculate the change of SS effected by different 2D quantum materials, including graphene, germanene and 2D topological insulators, inserted within the gate dielectric. This theoretical study showed that graphene/MoS 2 devices had steep SS (27.2 mV/decade), validating our experimental approach (49.2 mV/decade). Furthermore, the simulations demonstrated very steep SS (8.6 mV/decade) in WTe 2 /MoS 2 devices. We conclude that appropriate combination of various 2D quantum materials for the gate-channel stacks, leads to steep SS and is an effective method to extend the scaling of transistors with exceptional performance.
(© 2022 IOP Publishing Ltd.)
Databáze: MEDLINE
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