Analog and RF performance optimization for gate all around tunnel FET using broken-gap material.

Autor: Kumar P; Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, Dhanbad, 826004, India., Koley K; Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, Dhanbad, 826004, India. kalyan.koley@gmail.com.; Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, 835215, India. kalyan.koley@gmail.com., Mech BC; Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, Dhanbad, 826004, India.; Department of Electronics and Communication Engineering, Defence Institute of Advanced Technology, Girinagar, Pune, 411025, India., Maurya A; Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, Dhanbad, 826004, India., Kumar S; Department of Electronics Engineering, Indian Institutes of Technology, Dhanbad, Dhanbad, 826004, India.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2022 Oct 29; Vol. 12 (1), pp. 18254. Date of Electronic Publication: 2022 Oct 29.
DOI: 10.1038/s41598-022-22485-6
Abstrakt: Many times, the fabricated cylindrical gate-all-around tunnel FET (GAA TFET) has an uneven radius due to several etching and deposition processes involved while fabricating the device, which show notable variations in the performance of the device. In this report, III-V uneven GAA TFET is studied by considering the uneven radius as elliptical in shape for all possible variations, which shows a significant impact on analog and RF figure of merits (FOMs). The performance of the optimized devices is compared with their circular structure and with their maximum deviation in elliptical geometry for all possible variations in device channel and gate oxide. The variations in its device channel and gate oxide have shown a significant impact on the performance of the device. The analog and RF FOMs are studied, including the transconductance generation factor (g m /I DS ), intrinsic gain (g m R O ), capacitances (C GS , C GD ), cut-off frequency (f T ), and gate delay (τ m ).
(© 2022. The Author(s).)
Databáze: MEDLINE
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