| Autor: |
Tan Z; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat., de Rojas J; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat., Martins S; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat., Lopeandia A; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat.; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, E-08193 Barcelona, Spain., Quintana A; Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, E-08193 Barcelona, Spain., Cialone M; CNR-SPIN Genova, Corso F. M. Perrone 24, 16152 Genova, Italy., Herrero-Martín J; ALBA Synchrotron Light Source, 08290 Cerdanyola del Vallès, Spain., Meersschaut J; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium., Vantomme A; Quantum Solid State Physics, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium., Costa-Krämer JL; IMN-Instituto de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, 28760 Tres Cantos, Madrid, Spain., Sort J; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat.; Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain., Menéndez E; Departament de Física, Universitat Autònoma de Barcelona, E-08193 Cerdanyola del Vallès, Spain. jordi.sort@uab.cat. |
| Abstrakt: |
Magneto-ionics, which deals with the change of magnetic properties through voltage-driven ion migration, is expected to be one of the emerging technologies to develop energy-efficient spintronics. While a precise modulation of magnetism is achieved when voltage is applied, much more uncontrolled is the spontaneous evolution of magneto-ionic systems upon removing the electric stimuli ( i.e. , post-stimulated behavior). Here, we demonstrate a voltage-controllable N ion accumulation effect at the outer surface of CoN films adjacent to a liquid electrolyte, which allows for the control of magneto-ionic properties both during and after voltage pulse actuation ( i.e. , stimulated and post-stimulated behavior, respectively). This effect, which takes place when the CoN film thickness is below 50 nm and the voltage pulse frequency is at least 100 Hz, is based on the trade-off between generation (voltage ON) and partial depletion (voltage OFF) of ferromagnetism in CoN by magneto-ionics. This novel effect may open opportunities for new neuromorphic computing functions, such as post-stimulated neural learning under deep sleep. |
