| Autor: |
Kshetri YK; Research Center for Green Advanced Materials, Sun Moon University, Chungnam 31460, Korea., Chaudhary B; Department of Fusion Science and Technology, Sun Moon University, Chungnam 31460, Korea., Dhakal DR; Research Center for Green Advanced Materials, Sun Moon University, Chungnam 31460, Korea., Lee SW; Department of Environment and Bio-Chemical Engineering, Sun Moon University, Chungnam 31460, Korea., Kim TH; Research Center for Green Advanced Materials, Sun Moon University, Chungnam 31460, Korea.; Department of Fusion Science and Technology, Sun Moon University, Chungnam 31460, Korea. |
| Abstrakt: |
In most inorganic phosphors, increasing the concentration of activators inevitably causes the concentration quenching effect, resulting in reduced emission intensity at a high level of activator doping and the conventional practice is to limit the activator concentration to avoid the quenching. In contrast, SiAlON ceramics preserve their chemical composition over a very wide range of doping of activator ions, which favors the adjustment and optimization of the luminescence properties avoiding concentration quenching. Here, we investigate the photoluminescence properties of Ho-doped SiAlON (Ho-SiAlON) ceramics phosphors prepared by the hot-press method. Ho-SiAlON ceramics show strong green visible (554 nm) as well as infrared (2046 nm) broadband downshifting emissions under 348 nm excitation. It is shown that there is no concentration quenching, even at a very high level of Ho doping. The emission intensity of the 554 nm band increased two-fold when the Ho concentration is doubled. The results show that the Ho-SiAlON ceramics can be useful for efficient green phosphors. |
