A Correlative Study of Interfacial Segregation in a Cu-Doped TiNiSn Thermoelectric half-Heusler Alloy.
Autor: | Halpin JE; SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, U.K., Jenkins B; Department of Materials, University of Oxford, Department of Materials, Parks Road, Oxford OX1 3PH, U.K., Moody MP; Department of Materials, University of Oxford, Department of Materials, Parks Road, Oxford OX1 3PH, U.K., Webster RWH; SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, U.K., Bos JG; Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, U.K., Bagot PAJ; Department of Materials, University of Oxford, Department of Materials, Parks Road, Oxford OX1 3PH, U.K., MacLaren DA; SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, U.K. |
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Jazyk: | angličtina |
Zdroj: | ACS applied electronic materials [ACS Appl Electron Mater] 2022 Sep 27; Vol. 4 (9), pp. 4446-4454. Date of Electronic Publication: 2022 Aug 23. |
DOI: | 10.1021/acsaelm.2c00699 |
Abstrakt: | The performance of thermoelectric materials depends on both their atomic-scale chemistry and the nature of microstructural details such as grain boundaries and inclusions. Here, the elemental distribution throughout a TiNiCu Competing Interests: The authors declare no competing financial interest. (© 2022 The Authors. Published by American Chemical Society.) |
Databáze: | MEDLINE |
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