Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction.

Autor: Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Zhu M; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA., Akl M; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA., Lu K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Han NM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Baek Y; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA., Chang CS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA., Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Zhang Y; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA., Choi C; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA., Shin H; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Yu H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng Y; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA., Kim SI; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea., Seo S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Lee K; Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA., Kum HS; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Lee JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea., Ahn JH; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea., Bae SH; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu.; Institute of Materials Science and Engineering, Washington University in Saint Louis, St. Louis, MO, USA. sbae22@wustl.edu., Hwang J; Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA. hwang.458@osu.edu., Shi Y; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA. shiy2@rpi.edu., Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA. jeehwan@mit.edu.
Jazyk: angličtina
Zdroj: Nature nanotechnology [Nat Nanotechnol] 2022 Oct; Vol. 17 (10), pp. 1054-1059. Date of Electronic Publication: 2022 Sep 22.
DOI: 10.1038/s41565-022-01200-6
Abstrakt: Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems 1 . Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials 2 . Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles 3 . Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.
(© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)
Databáze: MEDLINE
Externí odkaz: