Temperature dependent studies on centimeter-scale MoS 2 and vdW heterostructures.

Autor: Sebastian AR; The Department of Electrical and Computer Engineering, The University of Texas at San Antonio, One UTSA Circle, San Antonio, Texas TX-78249, United States of America., Kaium MG; NanoScience Technology Center, Materials Science & Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, Florida FL-32816, United States of America., Ko TJ; NanoScience Technology Center, Materials Science & Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, Florida FL-32816, United States of America., Shawkat MS; NanoScience Technology Center, Materials Science & Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, Florida FL-32816, United States of America., Jung Y; NanoScience Technology Center, Materials Science & Engineering, University of Central Florida, 4000 Central Florida Blvd, Orlando, Florida FL-32816, United States of America., Ahn EC; The Department of Electrical and Computer Engineering, The University of Texas at San Antonio, One UTSA Circle, San Antonio, Texas TX-78249, United States of America.
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2022 Oct 07; Vol. 33 (50). Date of Electronic Publication: 2022 Oct 07.
DOI: 10.1088/1361-6528/ac9416
Abstrakt: Transition metal dichalcogenides is an emerging 2D semiconducting material group which has excellent physical properties in the ultimately scaled thickness dimension. Specifically, van der Waals heterostructures hold the great promise in further advancing both the fundamental scientific knowledge and practical technological applications of 2D materials. Although 2D materials have been extensively studied for various sensing applications, temperature sensing still remains relatively unexplored. In this work, we experimentally study the temperature-dependent Raman spectroscopy and electrical conductivity of molybdenum disulfide (MoS 2 ) and its heterostructures with platinum dichalcogenides (PtSe 2 and PtTe 2 ) to explore their potential to become the next-generation temperature sensor. It is found that the MoS 2 -PtX 2 heterostructure shows the great promise as the high-sensitivity temperature sensor.
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Databáze: MEDLINE